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| inchange semiconductor product specification silicon pnp power transistors MJE2955T description ? with to-220 package ? complement to type mje3055t ? dc current gain -h fe = 20?70 @ i c = -4 adc ? collector?emitter saturation voltage - v ce(sat) = -1.1 vdc (max) @ i c =- 4 adc applications ? designed for general?purpose switching and amplifier applications. pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -70 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -5 v i c collector current -10 a i b base current -6 a p c collector power dissipation t c =25 ?? 75 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.67 ??/w fig.1 simplified outline (to-220) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors MJE2955T characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-0.2a ;i b =0 -60 v v cesat-1 collector-emitter saturation voltage i c =-4a ;i b =-0.4a -1.1 v v cesat-2 collector-emitter saturation voltage i c =-10a ;i b =-3.3a -8.0 v v be base-emitter on voltage i c =-4a ; v ce =-4v -1.8 v i ceo collector cut-off current v ce =-30v; i b =0 -0.7 ma i cex collector cut-off current v ce =-70v; v be(off) =-1.5v t c =150 ?? -1.0 -5.0 ma i cbo collector cut-off current v cb =-70v; i e =0 t c =150 ?? -1.0 -10 ma i ebo emitter cut-off current v eb =-5v; i c =0 -5.0 ma h fe-1 dc current gain i c =-4a ; v ce =-4v 20 100 h fe-2 dc current gain i c =-10a ; v ce =-4v 5.0 f t transition frequency i c =-0.5a ; v ce =-10v 2.0 mhz inchange semiconductor product specification 3 silicon pnp power transistors MJE2955T package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10mm) |
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